? 2009 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c10a i dm t c = 25 c, pulse width limited by t jm 35 a i a t c = 25 c10a e as t c = 25 c 750 mj dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25 c 125 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting force 11..65 / 2.5..14.6 n/lb. weight 2 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 2.5ma 3.0 5.5 v i gss v gs = 30v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v 15 a t j = 125 c 250 a r ds(on) v gs = 10v, i d = 8a, note 1 450 m polarhv tm hiperfet power mosfet (electrically isolated back surface) n-channel enhancement mode avalanche rated fast intrinsic diode IXFC16N50P v dss = 500v i d25 = 10a r ds(on) 450m ds99411f(5/09 ) t rr 200ns features z ul recognized package z silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation z avanlache rated z fast intrinsic diode advantages z easy to mount z space savings z high power density applications: z switched-mode and resonant-mode power supplies z dc-dc converters z laser drivers z ac and dc motor drives z robotics and servo controls g = gate d = drain s = source g d s isoplus 220 tm e153432 isolated tab
IXFC16N50P ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s; duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 8a, note 1 9 16 s c iss 2480 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 237 pf c rss 18 pf t d(on) 23 ns t r 25 ns t d(off) 70 ns t f 22 ns q g(on) 43 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 8a 15 nc q gd 12 nc r thjc 1.0 c/w r thcs 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 16 a i sm repetitive, pulse width limited by t jm 64 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 200 ns q rm 6.0 nc i rm 0.6 a i f = 16a, -di/dt = 100a/ s v r = 100v, v gs = 0v resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 8a r g = 10 (external) isoplus220 tm (ixfc) outline ref: ixys co 0177 r0 note: bottom heatsink (pin 4) is electrically isolated from pin 1,2, or 3.
? 2009 ixys corporation, all rights reserved ixfc16n60p fig. 1. output characteristics @ 25oc 0 2 4 6 8 10 12 14 16 18 20 0123456789 v ds - volts i d - amperes v gs = 10v 8v 6v 7v fig. 2. output characteristics @ 125oc 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. r ds(on) normalized to i d = 8a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 16a i d = 8a fig. 4. r ds(on) normalized to i d = 8a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 2 4 6 8 101214161820 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0 2 4 6 8 10 12 14 16 18 20 4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0 1 2 3 4 5 6 7 8 9 10 11 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade i d - amperes
IXFC16N50P ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. transconductance 0 4 8 12 16 20 24 28 0 2 4 6 8 101214161820 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0 10 20 30 40 50 60 70 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 q g - nanocoulombs v gs - volts v ds = 250v i d = 8a i g = 10ma fig. 10. capacitance 1 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 10.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 11. forward-bias safe operating area 0 1 10 100 10 100 1000 v ds - volts i d - amperes 25s 1ms 100s r ds(on) limit 10ms dc t j = 150oc t c = 25oc single pulse ixys ref: f_16n50p(5j-745)5-1-09-c
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